Active and Passive Electronic Components

Research Article

Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

Figure 10

hysteresis loops of (a) TiO2/S-InP, (b) PMA at 300°C, (c) PMA at 350°C, and (d) PMA at 400°C.
148705.fig.0010a
(a)
148705.fig.0010b
(b)
148705.fig.0010c
(c)
148705.fig.0010d
(d)