Comprehension of Postmetallization Annealed MOCVD-<svg     style="vertical-align:-4.32007pt;width:42.962502px;" id="M1" height="20.637501" version="1.1" viewBox="0 0 42.962502 20.637501" width="42.962502"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg>
 Treated III-V Semiconductors

<table>SIMS depth profiles for (a) TiO<sub>2</sub>/S-GaAs and (b) PMA (350°C)-<svg height="15.675" id="M57" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 32.512501 15.675" width="32.512501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>/S-GaAs.</table>

Active and Passive Electronic Components

fig3

Figure 3

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</svg>
 Treated III-V Semiconductors 

Figure 3 | Comprehension of Postmetallization Annealed MOCVD-
	
		
			

			

		
	
 on 
	
		
			

			

			

			

			

		
	

 Treated III-V Semiconductors 

Active and Passive Electronic Components

Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

Figure 3