Novel Power Reduction Technique for ReRAM with Automatic Avoidance Circuit for Wasteful Overwrite

Table 1

ReRAM device characteristics.

High-resistance value	80 kΩ
Low-resistance value	20 kΩ
SET transition time [1]	~50 ns
RESET transition time	~50 ns
SET voltage	More than 2.2 V
RESET voltage	Less than −1.4 V
Read voltage	Less than 0.5 V