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Active and Passive Electronic Components
Volume 2012, Article ID 276145, 7 pages
Research Article

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Faculty of Engineering, Bar Ilan University, 52900 Ramat Gan, Israel

Received 31 July 2011; Revised 14 November 2011; Accepted 1 December 2011

Academic Editor: Abdelkarim Mercha

Copyright © 2012 Doron Abraham et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Karsenty, and Chelly, “Modeling of the channel thickness influence on electrical characteristics and series resistance in gate-recessed nanoscale SOI MOSFETs,” Active and Passive Electronic Components, vol. 2013, 2013. View at Publisher · View at Google Scholar
  • A. Karsenty, and A. Chelly, “Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance,” Solid-State Electronics, vol. 91, pp. 28–35, 2014. View at Publisher · View at Google Scholar