Modeling of Current-Voltage Characteristics of the Photoactivated
Device Based on SOI Technology

<table>Schematic cross section of the SOI-PAM device. Like in a field effect device the information current flows through silicon channel that is limited by two terminals (source and drain). The source is connected to ground. Gate voltage <svg height="15.45" id="M3" style="vertical-align:-3.43843pt" version="1.1" viewbox="0 0 21.975 15.45" width="21.975" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> is applied at sufficient rate to bring the substrate into its deep depletion mode. An oblique illumination generates charges in the p-type substrate.</table>

Active and Passive Electronic Components

fig1

Figure 1

Figure 1: Modeling of Current-Voltage Characteristics of the Photoactivated
Device Based on SOI Technology 

Active and Passive Electronic Components

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Figure 1