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<table>Cross-sectional MOS devices with various IL. The BeO interfacial layer is placed between HfO<sub>2</sub> and p-type Si substrate.</table>

Active and Passive Electronic Components

fig1

Figure 1

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Active and Passive Electronic Components

Comparative Study of , , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

Figure 1