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<table>Gate leakage current versus EOT for SiO<sub>2</sub>/HfO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>(IL)/HfO<sub>2</sub>, and BeO(IL)/HfO<sub>2</sub> gate stacks. </table>

Active and Passive Electronic Components

fig2

Figure 2

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Active and Passive Electronic Components

Comparative Study of , , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

Figure 2