Comparative Study of <svg style="vertical-align:-4.32007pt;width:41.837502px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 41.837502 20.4125" width="41.837502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,14.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g><g transform="matrix(.022,0,0,-.022,10.553,14.975)"><path id="x69" d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" /></g><g transform="matrix(.022,0,0,-.022,16.561,14.975)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g><g transform="matrix(.016,0,0,-.016,33.3,20.35)"><path id="x1D7D0" d="M453 211h25l-46 -211h-415v23q97 102 151 166q42 49 81 110q51 78 51 148q0 56 -31.5 91.5t-87.5 35.5q-77 0 -122 -90h-28q67 204 223 204q82 0 132 -49.5t50 -133.5q0 -110 -114 -218l-162 -154h140q82 0 107 13q27 13 46 65z" /></g></svg>, <svg style="vertical-align:-4.49648pt;width:55.037498px;" id="M2" height="21.6875" version="1.1" viewBox="0 0 55.037498 21.6875" width="55.037498" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,16.025)"><path id="x41" d="M673 0h-245v28q47 6 58 16t1 39l-55 154h-213q-31 -87 -36 -129q-16 -47 -5 -61t68 -19v-28h-226v28q50 7 68.5 23.5t43.5 80.5l214 524l24 9l193 -536q23 -63 41.5 -79.5t68.5 -21.5v-28zM418 280l-81 255h-2q-74 -197 -101 -255h184z" /></g><g transform="matrix(.022,0,0,-.022,15.597,16.025)"><path id="x6C" d="M238 0h-223v26q48 5 60 17t12 61v473q0 50 -10.5 60.5t-58.5 15.5v24q73 8 148 35v-608q0 -49 11.5 -61t60.5 -17v-26z" /></g><g transform="matrix(.016,0,0,-.016,21.288,21.4)"><use xlink:href="#x1D7D0" /></g><g transform="matrix(.022,0,0,-.022,29.763,16.025)"><use xlink:href="#x4F" /></g><g transform="matrix(.016,0,0,-.016,46.5,21.4)"><path id="x1D7D1" d="M58 524l-21 12q80 152 229 152q73 0 119 -41q45 -41 45 -96q0 -40 -21.5 -74.5t-62.5 -52.5q57 -20 89.5 -68.5t32.5 -109.5q0 -110 -86 -185t-214 -75q-69 0 -110.5 24.5t-41.5 65.5q0 26 18.5 43t46.5 17q45 0 96 -57q39 -43 79 -43q45 0 71.5 34t26.5 88q0 75 -49 121
q-25 23 -56 39q-34 17 -97 38v17q69 21 100 53t31 78q0 103 -99 103q-40 0 -69.5 -19t-56.5 -64z" /></g></svg>, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

<table>F-N plots to compare the effective potential barrier height for three different gate stacks.</table>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Comparative Study of <svg style="vertical-align:-4.32007pt;width:41.837502px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 41.837502 20.4125" width="41.837502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,14.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g><g transform="matrix(.022,0,0,-.022,10.553,14.975)"><path id="x69" d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" /></g><g transform="matrix(.022,0,0,-.022,16.561,14.975)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g><g transform="matrix(.016,0,0,-.016,33.3,20.35)"><path id="x1D7D0" d="M453 211h25l-46 -211h-415v23q97 102 151 166q42 49 81 110q51 78 51 148q0 56 -31.5 91.5t-87.5 35.5q-77 0 -122 -90h-28q67 204 223 204q82 0 132 -49.5t50 -133.5q0 -110 -114 -218l-162 -154h140q82 0 107 13q27 13 46 65z" /></g></svg>, <svg style="vertical-align:-4.49648pt;width:55.037498px;" id="M2" height="21.6875" version="1.1" viewBox="0 0 55.037498 21.6875" width="55.037498" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,16.025)"><path id="x41" d="M673 0h-245v28q47 6 58 16t1 39l-55 154h-213q-31 -87 -36 -129q-16 -47 -5 -61t68 -19v-28h-226v28q50 7 68.5 23.5t43.5 80.5l214 524l24 9l193 -536q23 -63 41.5 -79.5t68.5 -21.5v-28zM418 280l-81 255h-2q-74 -197 -101 -255h184z" /></g><g transform="matrix(.022,0,0,-.022,15.597,16.025)"><path id="x6C" d="M238 0h-223v26q48 5 60 17t12 61v473q0 50 -10.5 60.5t-58.5 15.5v24q73 8 148 35v-608q0 -49 11.5 -61t60.5 -17v-26z" /></g><g transform="matrix(.016,0,0,-.016,21.288,21.4)"><use xlink:href="#x1D7D0" /></g><g transform="matrix(.022,0,0,-.022,29.763,16.025)"><use xlink:href="#x4F" /></g><g transform="matrix(.016,0,0,-.016,46.5,21.4)"><path id="x1D7D1" d="M58 524l-21 12q80 152 229 152q73 0 119 -41q45 -41 45 -96q0 -40 -21.5 -74.5t-62.5 -52.5q57 -20 89.5 -68.5t32.5 -109.5q0 -110 -86 -185t-214 -75q-69 0 -110.5 24.5t-41.5 65.5q0 26 18.5 43t46.5 17q45 0 96 -57q39 -43 79 -43q45 0 71.5 34t26.5 88q0 75 -49 121
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Active and Passive Electronic Components

Comparative Study of , , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

Figure 4