GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

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</svg> + UV Interface Treatment Technology

<table>The <svg height="12.775" id="M84" style="vertical-align:-4.0404pt" version="1.1" viewbox="0 0 20.1625 12.775" width="20.1625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>-<svg height="18.3125" id="M85" style="vertical-align:-5.73166pt" version="1.1" viewbox="0 0 23.299999 18.3125" width="23.299999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.188)"><path d="M463 437l5 -8q-21 -38 -45 -51l-57 3q30 -35 30 -88q0 -76 -52.5 -118t-122.5 -42q-24 0 -51 5q-30 -21 -30 -42q0 -16 16 -27t47 -11q19 0 54 0.5t52 0.5q36 0 65.5 -8t53.5 -36t24 -74q0 -77 -75 -137.5t-174 -60.5q-79 0 -126 37.5t-48 84.5q0 32 24 56q21 21 83 70
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</svg> characteristics of various devices.</table>

Active and Passive Electronic Components

fig11

Figure 11

Figure 11: GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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t-108.5 38.5q-44 0 -56 -12q-11 -8 -11 -47z" /></g>

			<g transform="matrix(.016,-0,0,-.016,12.687,21.363)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

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			<g transform="matrix(.016,-0,0,-.016,106.337,21.363)"><use xlink:href="#x32"/></g>

			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

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</svg> + UV Interface Treatment Technology 

Figure 11 | GaN-Based High-k Praseodymium Oxide Gate MISFETs with 
	
		
			

			

			

			

			

			

			

			

			

			

		
	
 + UV Interface Treatment Technology 

Active and Passive Electronic Components

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Figure 11