GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg> + UV Interface Treatment Technology

<table>The SIMS measurements of the S atoms (a) and O atoms (b) distribution versus AlGaN/GaN depth for various treatment samples.</table>

Active and Passive Electronic Components

fig8

Figure 8

Figure 8: GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg> + UV Interface Treatment Technology 

Figure 8 | GaN-Based High-k Praseodymium Oxide Gate MISFETs with 
	
		
			

			

			

			

			

			

			

			

			

			

		
	
 + UV Interface Treatment Technology 

Active and Passive Electronic Components

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Figure 8