Figure 11: Use of the transconductance figure of merit to evaluate process changes. Effect of increasing oxide dielectric constant, increasing length or decreasing oxide thickness. The red line is a thick-oxide transistor; the black lines are from a thin oxide transistor. Both sets of curves are from transistors of a width of 100 μm and lengths L = 5 μm, 1 μm, and 0.5 μm from left to right.