Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

Table 1

SELBOX parameters.

Oxide thickness [𝑡box]	0.4 μm
Oxide gap length [𝑤gap]	0.04 μm
Estimated gap resistance 𝑅gap using (2); 𝑔sb from Figure 14	1346 Ω
	3 × 10^−5 A/V