Active and Passive Electronic Components / 2012 / Article / Tab 2

Research Article

A Unified Channel Charges Expression for Analytic MOSFET Modeling

Table 2

The simplified analytic drain current models.

Physical constants ,
Process parameters
Device voltages
Surface potential in ,   
Surface potential
Mobility
Drain current from Pao-sah
Gate voltage factors ,  
Analytic expression of drain current
Saturation voltage
Drain current with saturation
Channel length modulation
Drain-induced barrier lowering