Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO<sub>2</sub>/InAs <i>p</i>MOS Capacitors

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</svg> characteristics of Pt/HfO<sub>2</sub>/InP/InAs MOS capacitors in which HfO<sub>2</sub> was deposited at 200, 250, and 300°C, respectively.</table>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO<sub>2</sub>/InAs <i>p</i>MOS Capacitors 

Active and Passive Electronic Components

Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO2/InAs pMOS Capacitors

Figure 4

Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO₂/InAs pMOS Capacitors