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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 796973, 15 pages
Research Article

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

1XLIM-High Frequency Components, Circuits, Signals and System Department (C2S2), Université de Limoges, 7 rue Jules Vallés, 19100 Brive, France
2III–V Lab, Joint Lab between Bell Labs, TRT and CEA/Leti, Route de Nozay, 91460 Marcoussis, France

Received 13 September 2011; Accepted 18 November 2011

Academic Editor: Christoph Sandner

Copyright © 2012 S. Laurent et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology ( nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.