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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 806253, 11 pages
Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Department of ECE, North Carolina State University, Raleigh, NC 27695-7911, USA

Received 10 August 2011; Accepted 28 October 2011

Academic Editor: Narayanan Balasubramanian

Copyright © 2012 Danqiong Hou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.