Active and Passive Electronic Components / 2012 / Article / Tab 1

Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Table 1

Input parameters for the AlGaN/GaN HFET model.


Electron mobility1120 cm2/V-s
v satSaturation velocity  cm/s
Curvature parameter in v-E relation1.45
ε(GaN)GaN permittivity10.1
(GaN)Energy gap of GaN3.52 eV
Affinity of AlGaN3.8 eV
Affinity of metal4.3 eV
Al mole fraction in AlGaN0.3
Gate length0.8 μm
Length of the source access1.2 μm
Length of the drain access2.0 μm
WGate width400 μm
Thickness of the AlGaN barrier layer30 nm
Thickness of the GaN buffer layer0.3 μm
Unintentional doping in AlGaN layer1016 cm−3
Polarization sheet charge density  cm−2
PiezoPiezo charge density  cm−2
Channel breakdown voltage39
Drain-to-source breakdown resistance13
BkdslpSlope of 0

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