Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Table 1

Input parameters for the AlGaN/GaN HFET model.

Parameter	Description	Value
𝜇0	Electron mobility	1120 cm^2/V-s
v sat	Saturation velocity	1.195×10^−7 cm/s
𝛽	Curvature parameter in v-E relation	1.45
ε(GaN)	GaN permittivity	10.1
𝐸𝑔(GaN)	Energy gap of GaN	3.52 eV
𝜒AlGaN	Affinity of AlGaN	3.8 eV
𝜒𝑚	Affinity of metal	4.3 eV
Al𝑥	Al mole fraction in AlGaN	0.3
𝑙𝑔	Gate length	0.8 μm
𝑙𝑠	Length of the source access	1.2 μm
𝑙𝑑	Length of the drain access	2.0 μm
W	Gate width	400 μm
𝑡AlGaN	Thickness of the AlGaN barrier layer	30 nm
𝑡GaN	Thickness of the GaN buffer layer	0.3 μm
𝑛ox	Unintentional doping in AlGaN layer	10^16 cm^−3
𝑛ss	Polarization sheet charge density	7.1×10^12 cm^−2
Piezo	Piezo charge density	13×10^11 cm^−2
𝐵𝑉ds	Channel breakdown voltage	39
𝑅dsbk	Drain-to-source breakdown resistance	13
Bkdslp	Slope of 𝐵𝑉ds	0