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Active and Passive Electronic Components
Volume 2012, Article ID 871620, 8 pages
Research Article

Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY 14853, USA

Received 16 June 2011; Revised 16 January 2012; Accepted 23 January 2012

Academic Editor: Egidio Ragonese

Copyright © 2012 Timothy Reissman et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We present copper structures composed of multilayer, stacked inductors (MLSIs) with tens of micro-Henry inductance for use in low frequency (sub 100 MHz), power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal) layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.