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Active and Passive Electronic Components
Volume 2012, Article ID 872494, 4 pages
http://dx.doi.org/10.1155/2012/872494
Research Article

The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
2Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 824, Taiwan

Received 9 March 2012; Revised 23 April 2012; Accepted 26 April 2012

Academic Editor: Kuan-Wei Lee

Copyright © 2012 Yi-Lin Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. H. H. Tseng, P. J. Tobin, S. Kalpat et al., “Defect passivation with fluorine and interface engineering for Hf-based high-κ/metal gate stack device reliability and performance enhancement,” IEEE Transactions on Electron Devices, vol. 54, no. 12, pp. 3267–3275, 2007. View at Publisher · View at Google Scholar · View at Scopus
  2. S. Zafar, H. Jagannathan, L. F. Edge, and D. Gupta, “Oxygen vacancy mobility and diffusion coefficient determined from current measurements in SiO2/HfO2/TiN stacks,” in Proceedings of the International Conference on Solid State Devices and Materials, p. 669, 2010.
  3. S. Guha and V. Narayanan, “Oxygen vacancies in high dielectric constant oxide-semiconductor films,” Physical Review Letters, vol. 98, no. 19, Article ID 196101, 2007. View at Publisher · View at Google Scholar · View at Scopus
  4. K. Shiraishi, K. Yamada, K. Torii et al., “Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -A theoretical approach,” Japanese Journal of Applied Physics, Part 2, vol. 43, no. 11 A, pp. L1413–L1415, 2004. View at Publisher · View at Google Scholar · View at Scopus
  5. M.-J. Jeng, H.-S. Lin, and J.-G. Hwu, “Rapid thermal post-metallization annealing effect on thin gate oxides,” Applied Surface Science, vol. 92, pp. 208–211, 1996. View at Publisher · View at Google Scholar · View at Scopus
  6. E. Cartier, M. Hopstaken, and M. Copel, “Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices,” Applied Physics Letters, vol. 95, no. 4, Article ID 042901, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. C. C. Hong and J. G. Hwu, “Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress,” Applied Physics Letters, vol. 79, no. 23, pp. 3797–3799, 2001. View at Publisher · View at Google Scholar · View at Scopus