Effects of Annealing Time on the Performance of OTFT on Glass with ZrO₂ as Gate Dielectric

Table 1

Device parameters of the OTFTs.

	0 min	5 min	15 min	40 min	60 min
𝜇 (×10^−3cm^2/Vs)	1.19	1.21	1.23	1.31	1.43
𝑆𝑆 (V/decade)	1.53	1.45	1.11	1.03	0.8
𝐼off (nA)	2.59	1.73	1.39	0.76	0.73
𝑁max (×10^13 cm^−2)	6.89	6.51	4.92	4.54	3.47