Research Article
Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics
Table 1
The properties of MIM with PVP insulators with different TiO2-blending concentration by IJP.
| Slurry | Pure PVP | PVP + 1 wt% TiO2 | PVP + 3 wt% TiO2 | PVP + 5 wt% TiO2 |
| Thickness (nm) | 500 | 450 | 460 | 490 | Roughness (nm) | 0.681 | 4.704 | 9.276 | 17.257 | Leakage current density (A/cm2) | 6.45 × 10−8 (at 63 V) | 5.50 × 10−7 (at 57 V) | 1.31 × 10−6 (at 58 V) | 2.95 × 10−6 (at 62 V) | Dielectric constant | 4.26 | 4.86 | 5.58 | 6.87 |
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