Research Article

Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

Table 1

The properties of MIM with PVP insulators with different TiO2-blending concentration by IJP.

SlurryPure PVPPVP + 1 wt% TiO2PVP + 3 wt% TiO2PVP + 5 wt% TiO2

Thickness (nm)500450460490
Roughness (nm)0.6814.7049.27617.257
Leakage current density (A/cm2)6.45 × 10−8 (at 63 V)5.50 × 10−7 (at 57 V)1.31 × 10−6 (at 58 V)2.95 × 10−6 (at 62 V)
Dielectric constant4.264.865.586.87