MCML D-Latch Using Triple-Tail Cells: Analysis and Design

Table 2

Effect of process variation on static parameters of the proposed and the traditional D-latch.

Parameter	NMOS
	T	F	S	F	S
	PMOS
	T	F	S	S	F
𝑉SWING (mV)
Proposed	427	590	327	447	417
Traditional	416	508	300	509	457
𝐴𝑣
Proposed	4.3	5.34	3.9	4.14	4.9
Traditional	4.34	4.42	4	4.46	5
NM (mV)
Proposed	143	216	104	147	148
Traditional	139	172	97	173	163

Different design corners are denoted by T: typical, F: fast, and S: slow.
Simulation condition: 𝐴_𝑣=4, 𝑉_SWING=0.4 V, 𝐶_𝐿=100 fF, and 𝐼_SS=100 µA.