A Novel Nanoscale FDSOI MOSFET with Block-Oxide

<table>Simulated (a) subthreshold swing and (b) <svg height="15.25" id="M96" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 29.8125 15.25" width="29.8125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M592 498l-30 -3q-13 63 -31 89q-13 19 -33.5 25.5t-75.5 6.5h-70v-493q0 -60 16 -75.5t86 -19.5v-28h-286v28q68 4 83.5 19.5t15.5 75.5v493h-62q-60 0 -83 -7t-33 -24q-12 -17 -32 -90h-29q10 116 12 180h20q10 -16 21 -20.5t34 -4.5h395q19 0 28.5 5t21.5 20h21
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</svg> dependence on the gate length <svg height="15.45" id="M97" style="vertical-align:-3.43848pt" version="1.1" viewbox="0 0 19.0625 15.45" width="19.0625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,9.763,15.187)"><path d="M713 296l-5 -25q-47 -7 -59 -20t-23 -72l-15 -79q-9 -48 -3 -74q-15 -3 -55 -13t-63 -15t-59.5 -10t-70.5 -5q-149 0 -243 80t-94 220q0 169 127.5 276.5t336.5 107.5q91 0 206 -36l-10 -165l-29 -1q1 85 -47.5 126t-146.5 41q-153 0 -243.5 -97t-90.5 -242
q0 -122 68.5 -198.5t188.5 -76.5q121 0 139 75l20 86q13 58 -1.5 70.5t-99.5 20.5l5 26h267z" id="x1D43A"></path></g>
</svg>. The bFDSOI-FETs show improved subthreshold swing and better <svg height="15.25" id="M98" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 29.8125 15.25" width="29.8125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M592 498l-30 -3q-13 63 -31 89q-13 19 -33.5 25.5t-75.5 6.5h-70v-493q0 -60 16 -75.5t86 -19.5v-28h-286v28q68 4 83.5 19.5t15.5 75.5v493h-62q-60 0 -83 -7t-33 -24q-12 -17 -32 -90h-29q10 116 12 180h20q10 -16 21 -20.5t34 -4.5h395q19 0 28.5 5t21.5 20h21
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</svg> rolloff than FDSOI-FET, similar to the UTBSOI-FET.</table>

Active and Passive Electronic Components

A Novel Nanoscale FDSOI MOSFET with Block-Oxide

Figure 8