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Active and Passive Electronic Components
Volume 2013 (2013), Article ID 720191, 7 pages
http://dx.doi.org/10.1155/2013/720191
Research Article

Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

1Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, West Bengal 712121, India
2Institute of Radio Physics and Electronics, University of Calcutta, 92 APC Road, Kolkata, West Bengal 700009, India

Received 24 February 2013; Accepted 5 April 2013

Academic Editor: Gerard Ghibaudo

Copyright © 2013 Suranjana Banerjee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density (  sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).