Noise Performance of Heterojunction DDR MITATT Devices Based on Si∼Si_1−𝑥Ge_𝑥 at W-Band

Table 2

Values of 𝑞 𝐺_Tp, 𝑞 𝐺_Ap, and 𝐺_Tp/𝐺_Ap.

Parameters	NSPS	NSpSG1	NSpSG2	nSGPS1	nSGPS2
𝑞𝐺Tp (×10^12 m^−3 sec^−1)	552.87	6.3498	3.6309	3.8271	1.4560
q 𝐺Ap (×10^15 m^−3 sec^−1)	1.7441	4.5615	3.5989	1.3303	2.2810
𝐺Tp/𝐺Ap (%)	31.69	0.14	0.10	0.29	0.06