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Active and Passive Electronic Components
Volume 2013, Article ID 801634, 10 pages
http://dx.doi.org/10.1155/2013/801634
Research Article

Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

1Faculty of Engineering, Jerusalem College of Technology, 91160 Jerusalem, Israel
2Faculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, Israel

Received 20 December 2012; Revised 8 May 2013; Accepted 8 May 2013

Academic Editor: Gerard Ghibaudo

Copyright © 2013 A. Karsenty and A. Chelly. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. Karsenty and A. Chelly, “Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs,” Active and Passive Electronic Components, vol. 2013, Article ID 801634, 10 pages, 2013. https://doi.org/10.1155/2013/801634.