Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs
Figure 2
Spectrophotometry measurements of the channel thickness performed on the tested dices containing Nano-Scale Body (NSB) devices (from 4.4 to 1.6 nm). The dices were cut from the same diameter SIMOX wafer. The accuracy of the measurements is confirmed by inserted HRTEM picture for the smallest channel thickness value (1.6 nm). The fitting is serving as a visual guide of the thickness distribution.
