Research Article

Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

Figure 2

(a) HRTEM image of a nanoscale Body Device (NSB), showing a view of the gate’s edge away from the source contact. Since the edge of the source is located 10 µm away from the Gate’s edge, the source is not visible here. (b) Zoom in below the Gate region reveals details of the recessed Silicon Channel and confirms the 1.6 nm thickness value. Gate oxide thickness is 26 nm.
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