Research Article
Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs
Table 1
Two-level factorial plan of the modeled values and for three factors: () frequency, () series resistance (according to NSB or UTB device), and () leak conductance. The channel length influence (100 m versus 8 m) is linked to the expected (actual) value. The low and high factor levels are indicated by (−) and (+) sign.
| ||||||
