Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

Table 5

Corner analysis of 𝑉_d1 during first recall.

	NMOS
	Slow	Typical	Fast
PMOS
Slow	−30 mV	—	−480 mV
Typical	—	−220 mV	—
Fast	−30 mV	—	−470 mV