On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

<div>A schematic cross section of simulated device layer structure (a) and corresponding net doping profile showing top portion of 4H-SiC based MOSFET (b).</div>

Active and Passive Electronic Components

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Figure 2

Figure 2: On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs 