Research Article
On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Figure 3
Conduction and valence band energy diagram (a), current-voltage characteristics at different temperatures for 20 nm thick SiO2 (b), electric field at the semiconductor-dielectric interface for various dielectrics (c), and gate current density at different gate-source biases for 20 nm SiO2 gate dielectric (d).
| (a) |
| (b) |
| (c) |
| (d) |