Research Article
On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Table 2
Parameters used in 4H-SiC based MOSFET device simulation.
| | Eg300 (eV) | 3.24 | Bandgap at 300 K | | Egalpha (eV/K) | 4.15 × 10−4 | Parameter of bandgap model | | Egbeta (eV/K) | −131 | Parameter of bandgap model | | Permittivity | 9.66 | Permittivity | | Affinity () | 4.2 | Affinity | | (cm6/s) | 5 × 10−32 | Auger recombination parameter for electrons | | (cm6/s) | 2 × 10−32 | Auger recombination parameter for holes | | (eV) | 0.2 | Acceptor energy level | | (eV) | 0.1 | Donor energy level | | (eV) | 4 | Degeneracy factor for valence band | | (eV) | 2 | Degeneracy factor for conduction band | | LT.TAUN | 5 | Lifetime model parameter for electrons | | LT.TAUP | 5 | Lifetime model parameter for holes | | (cm−3) | 3 × 1017 | SRH concentration-dependent lifetime for electrons | | (cm−3) | 3 × 1017 | SRH concentration-dependent lifetime for holes | | (A/K2 cm2) | 110 | Effective Richardson constant for electrons | | (A/K2 cm2) | 30 | Effective Richardson constant for holes |
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