Analysis of Random Variation in Subthreshold FGMOSFET

<div>N-type and P-type subthreshold FGMOSFET based comparative plots against <svg height="12.4698pt" id="M210" style="vertical-align:-3.18147pt" version="1.1" viewbox="-0.0498162 -9.28833 19.2692 12.4698" width="19.2692pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M162 -163V703H101V-163H162Z" id="g113-9"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="263" vert-adv-y="263"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,3.419,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,10.751,3.132)"><path d="M414 144C384 79 371 75 317 75H135L276 221C367 316 408 376 408 465C408 570 327 635 237 635C179 635 131 609 100 575L42 494L67 471C94 510 138 565 205 565C277 565 321 517 321 435C321 348 258 270 195 195C146 137 88 81 33 26V0H411C423 44 433 88 446 135L414 144Z" id="g50-51"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="487" vert-adv-y="487"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,15.697,0)"><path d="M162 -163V703H101V-163H162Z" id="g113-9"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="263" vert-adv-y="263"></glyph.data></g></svg> where <svg height="12.4698pt" id="M211" style="vertical-align:-3.18147pt" version="1.1" viewbox="-0.0498162 -9.28833 40.4559 12.4698" width="40.4559pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M162 -163V703H101V-163H162Z" id="g113-9"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="263" vert-adv-y="263"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,3.419,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,10.751,3.132)"><path d="M389 0V32C297 38 291 46 291 118V635C234 613 175 595 109 583V556L161 554C203 552 207 547 207 497V118C207 46 201 38 110 32V0H389Z" id="g50-50"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="487" vert-adv-y="487"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,15.697,0)"><path d="M162 -163V703H101V-163H162Z" id="g113-9"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="263" vert-adv-y="263"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,22.748,0)"><path d="M535 323V373H52V323H535ZM535 138V188H52V138H535Z" id="g117-34"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="587" vert-adv-y="587"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,34.011,0)"><path d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z" id="g113-49"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="480" vert-adv-y="480"></glyph.data></g></svg>.</div>

Active and Passive Electronic Components

Analysis of Random Variation in Subthreshold FGMOSFET

Figure 4