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Active and Passive Electronic Components
Volume 2016, Article ID 6068171, 8 pages
Research Article

Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

ORDIST, Grad. School of Sci. & Eng., Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

Received 24 September 2016; Revised 13 November 2016; Accepted 16 November 2016

Academic Editor: Mingxiang Wang

Copyright © 2016 Yasuhisa Omura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.