Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

Figure 2

Calculated effective mass values of electrons occupying the 1st excited state as a function of semiconductor layer thickness [11]. (a) Effective mass dependence on Si layer thickness. It is assumed that  eV⁻¹ in order to calculate the nonparabolic band effect. (b) Effective mass dependence on Si layer thickness. It is assumed that = 0.1 eV⁻¹ for and = 0.05 eV⁻¹ for in calculating the nonparabolic band effect.

(a)

(b)