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Active and Passive Electronic Components
Volume 2016, Article ID 8506507, 5 pages
http://dx.doi.org/10.1155/2016/8506507
Research Article

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

1Department of Electrical Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan
2Institute of Communications Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan

Received 3 June 2016; Revised 9 September 2016; Accepted 18 September 2016

Academic Editor: Wei Wang

Copyright © 2016 Chie-In Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chie-In Lee, Yan-Ting Lin, and Wei-Cheng Lin, “Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region,” Active and Passive Electronic Components, vol. 2016, Article ID 8506507, 5 pages, 2016. https://doi.org/10.1155/2016/8506507.