Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Figure 2

Measured (symbols) and simulated (lines) minimum noise figure and equivalent noise resistance at = 1.1 V and = 3.6 V in the breakdown region for different emitter widths. The emitter length is fixed as 1.7 μm. Solid and dash lines depict the results obtained from the noise model with and without considering the breakdown network, respectively. In the inset, the results for different emitter lengths as the emitter width is fixed as 0.6 μm are shown. (a) Minimum noise figure. (b) Equivalent noise resistance.

(a)

(b)