Table of Contents Author Guidelines Submit a Manuscript
Active and Passive Electronic Components
Volume 2016, Article ID 8506507, 5 pages
http://dx.doi.org/10.1155/2016/8506507
Research Article

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

1Department of Electrical Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan
2Institute of Communications Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan

Received 3 June 2016; Revised 9 September 2016; Accepted 18 September 2016

Academic Editor: Wei Wang

Copyright © 2016 Chie-In Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J.-D. Chen, “A low-power ultrawideband low-noise amplifier in 0.18 μm CMOS technology,” Active and Passive Electronic Components, vol. 2013, Article ID 953498, 10 pages, 2013. View at Publisher · View at Google Scholar · View at Scopus
  2. A. Caddemi and M. Sannino, “Small-signal and noise model determination for double polysilicon self-aligned bipolar transistors,” Active and Passive Electronic Components, vol. 17, no. 3, pp. 167–175, 1994. View at Publisher · View at Google Scholar
  3. W.-K. Lee, S. Lam, and M. Chan, “Effects of spacer thickness on noise performance of bipolar transistors,” IEEE Transactions on Electron Devices, vol. 51, no. 9, pp. 1534–1537, 2004. View at Publisher · View at Google Scholar · View at Scopus
  4. S. Zhang, G. Niu, J. D. Cressler, A. J. Joseph, G. Freeman, and D. L. Harame, “The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 429–435, 2002. View at Publisher · View at Google Scholar · View at Scopus
  5. H. Liu, X. Zhu, C. C. Boon, and X. Yi, “Design of an oscillator with low phase noise and medium output power in a 0.25 μm GaN-on-SiC high electron-mobility transistors technology,” IET Microwaves, Antennas & Propagation, vol. 9, no. 8, pp. 795–801, 2015. View at Publisher · View at Google Scholar · View at Scopus
  6. H. Liu, X. Zhu, C. C. Boon, X. Yi, M. Mao, and W. Yang, “Design of ultra-low phase noise and high power integrated oscillator in 0.25 μm GaN-on-SiC HEMT technology,” IEEE Microwave and Wireless Components Letters, vol. 24, no. 2, pp. 120–122, 2014. View at Publisher · View at Google Scholar · View at Scopus
  7. W. Jiang, N. Shimada, S. D. Prasad, and K. Yatsui, “Experimental and simulation studies of new configuration of virtual cathode oscillator,” IEEE Transactions on Plasma Science, vol. 32, no. 1, pp. 54–59, 2004. View at Publisher · View at Google Scholar · View at Scopus
  8. H. Li, H.-M. Rein, T. Suttorp, and J. Böck, “Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz,” IEEE Journal of Solid-State Circuits, vol. 39, no. 10, pp. 1650–1658, 2004. View at Publisher · View at Google Scholar · View at Scopus
  9. P. Sakalas, M. Ramonas, M. Schroter, C. Jungemann, A. Shimukovitch, and W. Kraus, “Impact ionization noise in SiGe HBTs: comparison of device and compact modeling with experimental results,” IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 328–336, 2009. View at Publisher · View at Google Scholar · View at Scopus
  10. J. C. J. Paasschens and R. De Kort, “Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors,” in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 108–111, September 2004. View at Scopus
  11. C. I. Lee, Y. T. Lin, and W. C. Lin, “An improved noise model for SiGe HBT with an inductive breakdown network in the avalanche region,” IEEE Transactions on Device and Materials Reliability, vol. 15, no. 4, pp. 588–594, 2015. View at Publisher · View at Google Scholar
  12. R. J. Malik, L. M. Lunardi, R. W. Ryan, S. C. Shunk, and M. D. Feuer, “Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area,” Electronics Letters, vol. 25, no. 17, pp. 1175–1177, 1989. View at Publisher · View at Google Scholar · View at Scopus
  13. C.-I. Lee, Y.-T. Lin, and W.-C. Lin, “Investigation of linearity in the high electric field region for SiGe HBTs based on Volterra series,” IEEE Transactions on Device and Materials Reliability, vol. 14, no. 4, pp. 1049–1055, 2014. View at Publisher · View at Google Scholar · View at Scopus
  14. J. P. Roux, L. Escotte, R. Plana, J. Graffeuil, S. L. Delage, and H. Blanck, “Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies,” IEEE Transactions on Microwave Theory and Techniques, vol. 43, no. 2, pp. 293–298, 1995. View at Publisher · View at Google Scholar · View at Scopus
  15. L. Escotte, J.-P. Roux, R. Plana, J. Graffeuil, and A. Gruhle, “Noise modeling of microwave heterojunction bipolar transistors,” IEEE Transactions on Electron Devices, vol. 42, no. 5, pp. 883–889, 1995. View at Publisher · View at Google Scholar · View at Scopus
  16. S. Lee, K. J. Webb, V. Tilak, and L. F. Eastman, “Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 5, pp. 1567–1577, 2003. View at Publisher · View at Google Scholar · View at Scopus
  17. D. M. Pozar, Microwave Engineering, Wiley, New York, NY, USA, 3rd edition, 2005.
  18. R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Transactions on Electron Devices, vol. 13, no. 1, pp. 164–168, 1966. View at Publisher · View at Google Scholar · View at Scopus
  19. G. Dambrine and J.-P. Raskin, “High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits,” IEEE Transactions on Electron Devices, vol. 46, no. 8, pp. 1733–1741, 1999. View at Publisher · View at Google Scholar · View at Scopus