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Active and Passive Electronic Components
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Active and Passive Electronic Components
/
2016
/
Article
/
Tab 1
/
Research Article
Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region
Table 1
Comparison between extracted and calculated breakdown noise spectral density at
V and
V for different sized SiGe HBTs.
Operating region
Characterization method
DC
RF
Avalanche region
[
9
,
10
]
This work
Normal region
[
3
]
[
3
,
4
]
Fixed device size.