Journals
Publish with us
Publishing partnerships
About us
Blog
Active and Passive Electronic Components
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Active and Passive Electronic Components
/
2016
/
Article
/
Tab 3
/
Research Article
Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region
Table 3
The signal-to-noise ratio (SNR) of SiGe HBTs with different area at
V and
V in the breakdown region. The operating frequency is at 2 GHz.
Emitter width = 0.2
μ
m
Emitter width = 0.6
μ
m
Emitter length = 1.7
μ
m
85.6 dB
84.7 dB
Emitter length = 10.2
μ
m
85.2 dB
78.6 dB