Research Article
A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions
Figure 14
Comparing SC behaviour of two 1.2 kV/80 mΩ SiC MOSFETs from different manufacturers @ = 800 V; V; = 24 Ω; = 6.8 Ω; = 60 nH; = 25°C.