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Active and Passive Electronic Components
Volume 2017, Article ID 2543917, 8 pages
Research Article

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Beijing, China
3School of Engineering and Digital Arts, University of Kent, Canterbury CT2 7NT, UK

Correspondence should be addressed to Huajie Ke; nc.ude.udh@jhk

Received 23 February 2017; Revised 3 May 2017; Accepted 22 May 2017; Published 14 June 2017

Academic Editor: Dixian Zhao

Copyright © 2017 Zhiqun Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.