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Active and Passive Electronic Components
Volume 2017, Article ID 2543917, 8 pages
https://doi.org/10.1155/2017/2543917
Research Article

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Beijing, China
3School of Engineering and Digital Arts, University of Kent, Canterbury CT2 7NT, UK

Correspondence should be addressed to Huajie Ke; nc.ude.udh@jhk

Received 23 February 2017; Revised 3 May 2017; Accepted 22 May 2017; Published 14 June 2017

Academic Editor: Dixian Zhao

Copyright © 2017 Zhiqun Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Zhiqun Cheng, Xuefei Xuan, Huajie Ke, Guohua Liu, Zhihua Dong, and Steven Gao, “Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit,” Active and Passive Electronic Components, vol. 2017, Article ID 2543917, 8 pages, 2017. https://doi.org/10.1155/2017/2543917.