Table of Contents Author Guidelines Submit a Manuscript
Active and Passive Electronic Components
Volume 2017, Article ID 4181549, 8 pages
Research Article

Less-Conventional Low-Consumption Galvanic Separated MOSFET-IGBT Gate Drive Supply

1Ghent University, Ghent, Belgium
2University of Rwanda, Butare, Rwanda
3Electrical Energy Laboratory, Ghent University, Ghent, Belgium

Correspondence should be addressed to Jean Marie Vianney Bikorimana; eb.tnegu@anamirokib.yennaiveiramnaej

Received 6 December 2016; Revised 21 February 2017; Accepted 10 April 2017; Published 24 May 2017

Academic Editor: Bor-Ren Lin

Copyright © 2017 Jean Marie Vianney Bikorimana and Alex Van den Bossche. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it has a very low parasitic capacitance between primary and secondary coils, and it is cost-effective. Very low standby losses were observed during lab experiments. This makes it compatible with energy efficient drives and solar inverters.