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Active and Passive Electronic Components
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Active and Passive Electronic Components
/
2017
/
Article
/
Fig 4
/
Research Article
Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET
Figure 4
Transfer characteristics of triangular FinFET. (a) For low doping level (10
15
/cm
3
). (b) For high doping level (10
18
/cm
3
).
(a)
(b)