Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

<div>Transfer characteristics of triangular FinFET. (a) For low doping level (10<sup>15</sup>/cm<sup>3</sup>). (b) For high doping level (10<sup>18</sup>/cm<sup>3</sup>).</div>

Active and Passive Electronic Components

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Figure 4

Figure 4: Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET 