Power Device Thermal Fault Tolerant Control of High-Power Three-Level Explosion-Proof Inverter Based on Holographic Equivalent Dual-Mode Modulation

<div>Thermal analysis comparison between the two equivalent modes. (a) Temperature rise of heatsink based on simplified SVPWM; (b) temperature rise of heatsink based on quasi-square-wave modulation; (c) temperature rise of substrate based on simplified SVPWM; (d) temperature rise of substrate based on quasi-square-wave modulation.</div>

Active and Passive Electronic Components

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Figure 10

Figure 10: Power Device Thermal Fault Tolerant Control of High-Power Three-Level Explosion-Proof Inverter Based on Holographic Equivalent Dual-Mode Modulation 

Figure 10 | Power Device Thermal Fault Tolerant Control of High-Power Three-Level Explosion-Proof Inverter Based on Holographic Equivalent Dual-Mode Modulation 