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Active and Passive Electronic Components
Volume 2017, Article ID 9685685, 7 pages
Research Article

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

1School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, China
2School of Computer and Information Engineering, Zhejiang Gongshang University, Hangzhou, China

Correspondence should be addressed to Min Zhou; nc.ude.ujz@nimuohz

Received 19 June 2017; Accepted 6 September 2017; Published 15 October 2017

Academic Editor: Gerard Ghibaudo

Copyright © 2017 Jiongjiong Mo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different shift for different gate dielectrics. Single SiO2 layer shows the worst negative at , while double Si3N4/SiO2 shows negative shift at , positive shift at , and negligible shift at .