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Active and Passive Electronic Components
Volume 2017 (2017), Article ID 9685685, 7 pages
https://doi.org/10.1155/2017/9685685
Research Article

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

1School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, China
2School of Computer and Information Engineering, Zhejiang Gongshang University, Hangzhou, China

Correspondence should be addressed to Min Zhou

Received 19 June 2017; Accepted 6 September 2017; Published 15 October 2017

Academic Editor: Gerard Ghibaudo

Copyright © 2017 Jiongjiong Mo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jiongjiong Mo, Xuran Zhao, and Min Zhou, “Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics,” Active and Passive Electronic Components, vol. 2017, Article ID 9685685, 7 pages, 2017. doi:10.1155/2017/9685685