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Active and Passive Electronic Components
Volume 2017, Article ID 9685685, 7 pages
https://doi.org/10.1155/2017/9685685
Research Article

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

1School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, China
2School of Computer and Information Engineering, Zhejiang Gongshang University, Hangzhou, China

Correspondence should be addressed to Min Zhou; nc.ude.ujz@nimuohz

Received 19 June 2017; Accepted 6 September 2017; Published 15 October 2017

Academic Editor: Gerard Ghibaudo

Copyright © 2017 Jiongjiong Mo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J.-M. Lauenstein, A. D. Topper, M. C. Casey et al., “Recent radiation test results for power MOSFETs,” in Proceedings of the 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013, San Francisco, CA, USA, July 2013. View at Publisher · View at Google Scholar · View at Scopus
  2. M. V. O'Bryan, D. Chen, M. J. Campola et al., “Recent single event effects compendium of candidate electronics for NASA space systems,” in Proceedings of the IEEE NSREC11 Data Workshop, San Francisco, CA, USA, 2011. View at Publisher · View at Google Scholar
  3. M. Hartwell, K. Ryan, S. Netherton, P. Milliken, and D. Kerwin, “Total ionizing dose testing of a RadHard-by-Design FET driver in a 0.35μm triple-well process,” in Proceedings of the 2006 IEEE Radiation Effects Data Workshop, NSREC, pp. 94–100, Ponte Vedra, FL, USA, July 2006. View at Publisher · View at Google Scholar · View at Scopus
  4. K. Shenai, K. F. Galloway, and R. D. Schrimpf, “The effects of space radiation exposure on power MOSFETS: A review,” International Journal of High Speed Electronics and Systems, vol. 14, no. 2, pp. 445–463, 2004. View at Publisher · View at Google Scholar · View at Scopus
  5. K. Watanabe, M. Kato, T. Okabe, and M. Nagata, “Radiation effects of double layer dielectric films,” IEEE Transactions on Nuclear Science, vol. 33, no. 6, pp. 1216–1222, 1986. View at Publisher · View at Google Scholar · View at Scopus
  6. C. D. Cress, J. J. McMorrow, J. T. Robinson et al., “Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics,” MRS Communications, vol. 1, no. 1, pp. 27–31, 2011. View at Publisher · View at Google Scholar · View at Scopus
  7. A. G. Stanley, “Comparison of MOS and metal-nitride-semiconductor insulated gate field-effect transistors under electron irradiation,” IEEE Transactions on Nuclear Science, vol. NS-13, no. 6, pp. 248–254, 1966. View at Publisher · View at Google Scholar · View at Scopus
  8. D. Neamen, W. Shedd, and B. Buchanan, “Thin film silicon on silicon nitride for radiation hardened dielectric ally isolated misfet's,” IEEE Transactions on Nuclear Science, vol. 22, no. 6, pp. 2203–2207, 1975. View at Publisher · View at Google Scholar · View at Scopus
  9. R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. A. Reed, G. Lucovsky, and S. T. Pantelides, “Radiation effects in new materials for nano-devices,” Microelectronic Engineering, vol. 88, no. 7, pp. 1259–1264, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. W.-C. Hsieh, H.-T. D. Lee, F.-C. Jong, and S.-C. Wu, “Charge retention improvement of nonvolatile radiation sensor using metal-oxide-nitride-oxide-silicon with Si-rich nitride and oxy-nitride as stack charge-trapping layer,” Sensors and Materials, vol. 28, no. 9, pp. 1023–1033, 2016. View at Publisher · View at Google Scholar · View at Scopus
  11. J. R. Cricchi and D. F. Barbe, “Compensation of radiation effects by charge transport in metal-nitride-oxide-semiconductor structures,” Applied Physics Letters, vol. 19, no. 3, pp. 49–51, 1971. View at Publisher · View at Google Scholar · View at Scopus
  12. V. A. K. Raparla, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, and K. F. Galloway, “A model of radiation effects in nitride-oxide films for power MOSFET applications,” Solid-State Electronics, vol. 47, no. 5, pp. 775–783, 2003. View at Publisher · View at Google Scholar · View at Scopus
  13. N. A. Hastas, D. H. Tassis, C. A. Dimitriadis, and G. Kamarinos, “Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors,” IEEE Transactions on Electron Devices, vol. 50, no. 9, pp. 1991–1994, 2003. View at Publisher · View at Google Scholar · View at Scopus